11/21/2023 0 Comments 2n2222 transistor max currentGradually increase the output frequency of the signal source from 1 kHz, and observe the amplitude of the AC OUT signal on the right side of the experimental board using the oscilloscope. Measure the transistor’s cut-off frequency fβ and calculate its characteristic frequency fT using the “gain-bandwidth product” method. When the effective value of the voltage between the two terminals of R1 measured by the oscilloscope is 50 mVrms, and since R1 = 100 kohms, Ib is approximately equal to 0.5 uA. Set the signal source output to a 1 kHz sine wave and change the output amplitude. Calculate the effective value of Ib current so that Ib is approximately equal to 0.5 uA. Set the signal source output to a 1 kHz sine wave, adjust the signal source output signal amplitude, and use oscilloscope channel 2 to test the voltage waveform between the two terminals of R1 (connect the banana head interface marked as Input). The h-parameters of the transistor reflect the small-signal AC characteristics of the transistor under certain fixed static conditions.Ĭonnect the signal generator output to the BNC interface on the left side of the experimental board’s AC IN, and connect the oscilloscope Channel 1 to the BNC interface on the right side of the experimental board’s AC OUT. Where Ib and Vbe are the input variables of the transistor, and Ic and Vce are the output variables. With a reasonable setting of the static operating point and an AC small signal input, the transistor can be equivalent to a linear two-port circuit, represented by AC components of current and voltage. Once the base current separates, the transistor will turn off, so this phase is called the cutoff region, and the VBE may be around 600mV. Moreover, the collector-emitter/collector-base terminals are capable of handling typical voltages of 40V and 60V respectively. This particular stage is referred to as the saturation region. When the 2N3904 NPN transistor is completely biased, it permits a maximum of 200mA to flow through two specific terminals, namely emitter and collector. Once the current supply is given to the base terminal, the transistor can be biased. The maximum current supply across the collector terminal is 200mA, so loads consuming more than 200mA cannot be connected via this transistor. The high gain value of the 2N3904 transistor is 300, which determines its amplification ability. Similarly, once a signal is given to the base pin, it will be forward biased. The maximum collector current of the 2N2222 is 800mA, whereas the bc547's is 100mA.īoth the 2N2222 and the BC547 have the same power dissipation (500mw), the 2N2222 has a DC gain of 75 to 300HFe and the BC547 has a DC gain of 110 to 800HFe, and the 2N2222 has a thermal resistance of 146k/w and the BC547 has a thermal resistance of 83.3 C/w.īecause the transition frequency of 2N2222 is 250MHz and that of BC547 is 300MHz, the noise figure on 2N2222 is 4db and on BC547 is 10db.If the base pin is connected to the GND terminal, both the emitter and collector terminals are reverse biased or left open. The voltage between the emitter and the base is 5 volts in 2N2222 and 6 volts in BC547. The collector to base voltage at 2N2222 is 60 volts, whereas it is 50 volts at BC547, and the collector to emitter voltage is 30 volts at 2N2222 vs 45 volts at BC547. The 2N2222 has an emitter, base, and collector pinout, whereas the BC547 has a collector, base, and emitter pinout. The BC547 transistor came in a to-92 package, but 2N2222 transistors, such as the PN2222 and KN2222, also came in to-92 packages. The 2N transistors were packaged in a to-18 package, which means they were enclosed with metal. The 2N2222 transistor is more powerful than the BC547. Collector to Emitter Voltage (VCE) is 30V.Collector to Base voltage ( VCB ) is 50V.Collector to Emitter Voltage (VCE) is 45V.DC Current Gain range is 110 to 800 hFE.The maximum frequency on this frequency is 250MHZ, which is the 2N2222 transistor's transition frequency. The trigger terminal's maximum bias voltage is 200 mV, while the 2N2222 transistor's maximum bias current is 200 mA. The maximum collector current of the 2N2222 transistor is 800mA this is the greatest current that this device can handle. The maximum current gain of the 2N2222 transistor is 300hFE, and this number determines the transistor's amplification factor. A bipolar NPN transistor, the 2N2222 is a transistor with two poles.
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